IRLR3717TRRPBF
MOSFET N-CH 20V 120A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3717TRRPBF is an N-Channel Power MOSFET designed for high-current switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). The low on-resistance is specified as 4mOhm maximum at 15A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 2.45V maximum at 250µA. Input capacitance (Ciss) is a maximum of 2830pF at 10V Vds, and gate charge (Qg) is 31nC maximum at 4.5V Vgs. The MOSFET is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. It operates across a temperature range of -55°C to 175°C (TJ) with a maximum power dissipation of 89W (Tc). Commonly found in automotive, industrial power control, and battery management systems, this component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 10 V |
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