IRLR3717TRLPBF
MOSFET N-CH 20V 120A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR3717TRLPBF, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). This surface-mount device, packaged in a TO-252AA (DPAK), features a low on-resistance of 4mOhm maximum at 15A and 10V Vgs. Optimized for demanding power applications, it boasts a maximum gate charge of 31 nC at 4.5V and an input capacitance of 2830 pF at 10V. With a maximum power dissipation of 89W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is well-suited for automotive, industrial, and power supply applications. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 10 V |
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