IRLR3717PBF
MOSFET N-CH 20V 120A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3717PBF is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 120A at 25°C (Tc). The ultralow on-resistance (Rds On) of 4mOhm at 15A and 10V gate drive minimizes conduction losses. With a maximum power dissipation of 89W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it offers robust performance. The device is housed in a TO-252AA (DPAK) surface-mount package, facilitating efficient thermal management and board integration. Key parameters include a gate charge (Qg) of 31 nC at 4.5V and input capacitance (Ciss) of 2830 pF at 10V. This MOSFET is suitable for applications in automotive, industrial power control, and high-efficiency power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 10 V |
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