IRLR3715ZTRPBF
MOSFET N-CH 20V 49A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET, part number IRLR3715ZTRPBF, is an N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 20V. This device offers a continuous drain current (Id) of 49A at 25°C (Tc) and features a low on-resistance (Rds On) of 11mOhm maximum at 15A and 10V. The gate charge (Qg) is 11 nC maximum at 4.5V, and the input capacitance (Ciss) is 810 pF maximum at 10V. Designed for surface mounting in a TO-252AA (DPAK) package, it operates across a wide temperature range from -55°C to 175°C. This component is suitable for applications in automotive, industrial power control, and consumer electronics requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 10 V |
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