IRLR3715PBF
MOSFET N-CH 20V 54A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3715PBF is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 54 A at 25°C (Tc). The low on-resistance (Rds On) of 14 mOhm maximum at 26 A and 10 V gate drive ensures efficient power transfer. With a gate charge (Qg) of 17 nC at 4.5 V and input capacitance (Ciss) of 1060 pF at 10 V, it offers excellent switching characteristics. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20V. Its surface mount TO-252AA (DPAK) package facilitates integration in compact designs. The IRLR3715PBF is suitable for power management, automotive, and industrial motor control applications, operating across a wide temperature range of -55°C to 175°C. Power dissipation is rated at 71W (Tc) and 3.8W (Ta).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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