IRLR3715
MOSFET N-CH 20V 54A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3715 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 54A at 25°C (Tc). The low on-resistance (Rds On) of 14mOhm at 26A, 10V, coupled with a gate charge (Qg) of 17nC at 4.5V, facilitates reduced conduction and switching losses. The device operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. With a maximum power dissipation of 71W at 25°C (Tc), the IRLR3715 is suitable for demanding applications in industrial automation, power supplies, and automotive systems. It is available in a TO-252AA (DPAK) surface mount package.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 71W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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