IRLR3714ZPBF
MOSFET N-CH 20V 37A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3714ZPBF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 37A at 25°C (Tc). The low on-resistance (Rds On) of 15mOhm is achieved at 15A and 10V Vgs. With a gate charge (Qg) of 7.1 nC at 4.5V, it offers excellent switching performance. The device is housed in a TO-252AA (DPAK) surface-mount package, facilitating board-level integration. Maximum power dissipation is rated at 35W (Tc). Its robust operating temperature range of -55°C to 175°C makes it suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 10 V |
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