IRLR3714Z
MOSFET N-CH 20V 37A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLR3714Z. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 37A at 25°C (Tc). The low on-resistance of 15mOhm (max) at 15A, 10V drive is achieved with a gate drive voltage of 4.5V to 10V. With a maximum power dissipation of 35W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 7.1 nC (max) at 4.5V and input capacitance (Ciss) of 560 pF (max) at 10V. The device is housed in a TO-252AA (DPAK) surface-mount package. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly employed in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
