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IRLR3714TRPBF

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IRLR3714TRPBF

MOSFET N-CH 20V 36A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' HEXFET® IRLR3714TRPBF is a 20V N-Channel power MOSFET in a TO-252AA (DPAK) surface mount package. This component offers a continuous drain current of 36A (Tc) and a maximum power dissipation of 47W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 20mOhm at 18A and 10V Vgs, and a gate charge (Qg) of 9.7 nC at 4.5V. Input capacitance (Ciss) is rated at 670 pF maximum at 10V Vds. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power switching. It is supplied in tape and reel packaging.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)47W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds670 pF @ 10 V

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