IRLR3714TRLPBF
MOSFET N-CH 20V 36A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLR3714TRLPBF, offers exceptional performance for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 36A at 25°C (Tc). The low on-resistance of 20mOhm maximum at 18A and 10V gate-source voltage ensures minimal conduction losses. With a maximum power dissipation of 47W (Tc) and an operating temperature range of -55°C to 175°C, it is suitable for high-power density designs. The TO-252AA (DPAK) surface mount package facilitates efficient thermal management and automated assembly. Key parameters include a gate charge of 9.7 nC at 4.5V and an input capacitance of 670 pF at 10V. This MOSFET is commonly utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |
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