IRLR3410TRL
MOSFET N-CH 100V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLR3410TRL. This surface mount device features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 17A at 25°C (Tc). With a low on-resistance (Rds On) of 105mOhm maximum at 10A and 10V, it offers efficient power handling up to 79W (Tc). The device is provided in a TO-252AA (DPAK) package for automated assembly. Key electrical parameters include a gate charge (Qg) of 34 nC maximum at 5V and input capacitance (Ciss) of 800 pF maximum at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial automation, power supplies, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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