IRLR3303TRRPBF
MOSFET N-CH 30V 35A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3303TRRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Current Drain (Id) rating of 35A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 68W (Tc) and a low on-resistance (Rds On) of 31mOhm at 21A and 10V, it is optimized for thermal performance. The device utilizes advanced MOSFET technology and is supplied in a TO-252AA (DPAK) surface mount package for compact board designs. Key parameters include a Gate Charge (Qg) of 26 nC at 4.5V and Input Capacitance (Ciss) of 870 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive systems, industrial motor control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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