IRLR3303TRR
MOSFET N-CH 30V 35A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR3303TRR, offers a 30V drain-source voltage and a continuous drain current of 35A at 25°C (Tc). This surface-mount device, packaged in a TO-252AA (DPAK) configuration, features a low on-resistance of 31mOhm maximum at 21A and 10V Vgs. The gate charge is rated at 26nC maximum at 4.5V, with input capacitance at 870pF maximum at 25V. Designed for efficient power handling, it supports a maximum power dissipation of 68W (Tc) and operates within a temperature range of -55°C to 175°C. This component is commonly utilized in automotive and industrial power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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