IRLR3303PBF
MOSFET N-CH 30V 35A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRLR3303PBF, an N-Channel HEXFET® Power MOSFET. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 31mOhm maximum at 21A and 10V Vgs. With a gate charge (Qg) of 26 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 870 pF maximum at 25V Vds, this MOSFET is suitable for demanding applications. The power dissipation is rated at 68W (Tc). Designed for surface mounting, it is housed in a TO-252AA (DPAK) package. Operating temperature range is -55°C to 175°C (TJ). This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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