IRLR3110ZPBF
MOSFET N-CH 100V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR3110ZPBF. This TO-252AA (DPAK) surface mount device offers a 100 V Drain-to-Source voltage (Vdss) and a continuous drain current of 42 A at 25°C (Tc). Featuring low on-resistance of 14 mOhm maximum at 38 A and 10 V (Vgs), it achieves this with a gate drive of 4.5 V to 10 V. The device has a maximum power dissipation of 140 W (Tc) and a typical gate charge (Qg) of 48 nC at 4.5 V. Input capacitance (Ciss) is specified at 3980 pF maximum at 25 V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in applications requiring efficient power switching, including automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 25 V |