IRLR3105PBF
MOSFET N-CH 55V 25A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® series presents the IRLR3105PBF, an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 25A at 25°C case temperature, with a maximum power dissipation of 57W. The device exhibits a low on-resistance of 37mOhm at 15A and 10V gate-source voltage. Key parameters include a gate charge of 20 nC at 5V and input capacitance of 710 pF at 25V. The IRLR3105PBF is housed in a TO-252AA (DPAK) surface-mount package, facilitating efficient thermal management. It is suitable for use in various industrial and automotive power management systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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