IRLR3103TRRPBF
MOSFET N-CH 30V 55A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR3103TRRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage and a continuous drain current capability of 55A at 25°C (Tc), with a maximum power dissipation of 107W (Tc). The Rds(on) is specified at a low 19mOhm at 33A and 10V gate drive. Gate drive voltages range from 4.5V to 10V, with a maximum gate-source voltage of ±16V. Key electrical characteristics include a 50 nC gate charge (Qg) at 4.5V and 1600 pF input capacitance (Ciss) at 25V. The device is supplied in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |