IRLR3103TRLPBF
MOSFET N-CH 30V 55A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR3103TRLPBF, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 55A at 25°C (Tc). This surface-mount device, packaged in a TO-252AA (DPAK), features a low on-resistance of 19mOhm maximum at 33A and 10V Vgs. With a maximum power dissipation of 107W (Tc), it is suitable for applications requiring efficient power switching and control. The gate charge is specified at 50nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 1600pF maximum at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive, industrial power control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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