IRLR3103PBF
MOSFET N-CH 30V 55A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series MOSFET, part number IRLR3103PBF, is an N-Channel device featuring a 30V drain-source breakdown voltage. This surface mount component, packaged in TO-252AA (DPAK), offers a continuous drain current capability of 55A at 25°C (Tc) and a maximum power dissipation of 107W (Tc). Key electrical parameters include a low on-resistance of 19mOhm at 33A and 10V Vgs, a gate charge of 50 nC at 4.5V Vgs, and an input capacitance of 1600 pF at 25V Vds. It operates within a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±16V. This MOSFET is suitable for applications in automotive, industrial power control, and consumer electronics requiring efficient switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |