IRLR2908TRLPBF
MOSFET N-CH 80V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR2908TRLPBF is an 80V N-Channel Power MOSFET engineered for efficient power switching applications. This component, housed in a TO-252AA (DPAK) surface-mount package, offers a continuous drain current capability of 30A at 25°C (Tc) and a maximum power dissipation of 120W (Tc). Key electrical characteristics include a low on-resistance (Rds on) of 28mOhm at 23A and 10V, and gate charge (Qg) of 33 nC at 4.5V, facilitating high-speed switching. The MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for use in automotive, industrial, and general power supply sectors. The device is supplied on tape and reel for automated assembly processes.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |