IRLR2905ZPBF
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRLR2905ZPBF. This device features a 55V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C. With a low on-resistance (Rds On) of 13.5mOhm maximum at 36A and 10V Vgs, it offers efficient power switching. The MOSFET is packaged in a TO-252AA (DPAK) surface mount configuration, enabling high-density board designs. Key electrical parameters include a maximum power dissipation of 110W (Tc), gate charge (Qg) of 35 nC at 5V, and input capacitance (Ciss) of 1570 pF at 25V. This component is suitable for applications requiring robust power handling in automotive, industrial motor control, and power supply designs. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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