IRLR2905PBF
MOSFET N-CH 55V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR2905PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 42A at 25°C, with a maximum power dissipation of 110W. The IRLR2905PBF exhibits a low on-resistance (Rds On) of 27mOhm at 25A and 10V. It is packaged in a TO-252AA (DPAK) surface-mount package, suitable for demanding thermal management. Key electrical characteristics include a gate charge (Qg) of 48nC at 5V and input capacitance (Ciss) of 1700pF at 25V. This MOSFET is utilized in industries such as automotive, industrial power control, and telecommunications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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