IRLR2705TRL
MOSFET N-CH 55V 28A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR2705TRL is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 28A at 25°C (Tc). The low on-resistance of 40mOhm at 17A and 10V Vgs makes it suitable for power conversion circuits. With a maximum power dissipation of 68W (Tc) and a junction temperature range of -55°C to 175°C, it is engineered for demanding operational environments. The surface mount TO-252AA (DPAK) package provides a compact footprint for PCB integration. Typical applications include automotive power management, industrial motor control, and power supply units. This device is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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