IRLR2703PBF
MOSFET N-CH 30V 23A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR2703PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V Drain-Source voltage (Vdss) and a continuous drain current of 23A (Tc) with a maximum power dissipation of 45W (Tc). The low on-resistance of 45mOhm at 14A and 10V Vgs makes it highly efficient. Key parameters include a gate charge (Qg) of 15 nC at 4.5V and input capacitance (Ciss) of 450 pF at 25V. The device is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET finds application in power management, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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