IRLR120NTRLPBF
MOSFET N-CH 100V 10A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET MOSFET N-Channel, part number IRLR120NTRLPBF, is a surface mount device in a TO-252AA (DPAK) package. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 10 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 185 mOhm at 6 A and 10 V. With a gate charge (Qg) of 20 nC at 5 V and input capacitance (Ciss) of 440 pF at 25 V, this MOSFET is designed for efficient switching. It offers a power dissipation of 48 W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in power supply applications, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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