IRLR024ZTRLPBF
MOSFET N-CH 55V 16A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR024ZTRLPBF, offers a 55V Drain-Source breakdown voltage and a continuous drain current capability of 16A at 25°C. This surface mount device in a TO-252AA (DPAK) package features a low Rds(on) of 58mOhm maximum at 9.6A and 10V Vgs. Optimized for efficient switching, it exhibits a typical gate charge of 9.9 nC at 5V and an input capacitance of 380 pF at 25V. With a maximum power dissipation of 35W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors. The device is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |