IRLR024NTRRPBF
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRLR024NTRRPBF is a N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C (Tc). With a low on-resistance of 65mOhm maximum at 10A and 10V, it ensures efficient power transfer. The device offers a gate charge of 15nC maximum at 5V and an input capacitance of 480pF maximum at 25V. Operating from a gate drive voltage range of 4V to 10V, the IRLR024NTRRPBF is packaged in a surface-mount TO-252AA (DPAK) and supports a maximum power dissipation of 45W (Tc). Its robust construction allows operation across an extended temperature range from -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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