IRLR024NTRR
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRLR024NTRR, offers a 55V drain-source voltage (Vdss) and continuous drain current capability of 17A at 25°C (Tc). This surface mount device, packaged in a TO-252AA (DPAK), features a low on-resistance of 65mOhm maximum at 10A, 10V, and a gate charge (Qg) of 15 nC maximum at 5V. With a maximum power dissipation of 45W (Tc) and an operating temperature range of -55°C to 175°C, the IRLR024NTRR is suitable for applications in industrial automation, power supply design, and automotive systems. The MOSFET technology provides efficient switching performance, with typical drive voltages ranging from 4V to 10V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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