IRLR024NTRLPBF
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLR024NTRLPBF is an N-channel power MOSFET designed for demanding applications. This device offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 17A at 25°C (Tc), with a maximum power dissipation of 45W (Tc). The IRLR024NTRLPBF features a low on-resistance (Rds On) of 65mOhm maximum at 10A and 10V, facilitated by a gate charge (Qg) of 15 nC maximum at 5V and a high input capacitance (Ciss) of 480 pF maximum at 25V. It operates with a gate-source voltage (Vgs) range of 4V to 10V and has a maximum Vgs rating of ±16V. The MOSFET is housed in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. This component is commonly utilized in automotive, industrial, and power supply applications where efficient switching is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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