IRLR024NTRL
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLR024NTRL is an N-channel power MOSFET with a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 17 A at 25°C. This component features a low on-resistance of 65 mOhm maximum at 10 A and 10 V Vgs. The device is housed in a TO-252AA (DPAK) surface-mount package and offers a maximum power dissipation of 45 W. Key characteristics include a gate charge (Qg) of 15 nC maximum at 5 V and input capacitance (Ciss) of 480 pF maximum at 25 V. It is designed for applications requiring efficient switching and conduction, often found in power supplies, motor control, and automotive electronics. Operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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