IRLR014NTRL
MOSFET N-CH 55V 10A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IRLR014NTRL is an N-Channel HEXFET® power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 10A at 25°C (Tc). The low on-resistance (Rds(on) max) of 140mOhm at 6A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 28W (Tc), it is suitable for power management in automotive, industrial, and telecommunications sectors. The device is supplied in a TO-252AA (DPAK) surface-mount package, delivered on tape and reel. Key parameters include a gate charge (Qg) of 7.9 nC at 5V Vgs and input capacitance (Ciss) of 265 pF at 25V Vds. It operates across a wide temperature range of -55°C to 175°C (TJ), with a maximum gate-source voltage of ±16V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V |
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