IRLR014NPBF
MOSFET N-CH 55V 10A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRLR014NPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 28W (Tc). The IRLR014NPBF offers a low on-resistance (Rds On) of 140mOhm maximum at 6A and 10V, facilitating minimal conduction losses. It is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly processes. Key electrical characteristics include a Gate Charge (Qg) of 7.9 nC maximum at 5V and an Input Capacitance (Ciss) of 265 pF maximum at 25V. This MOSFET is utilized across various industries, including automotive and industrial automation, for power management and control functions. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
