IRLMS6702TRPBF
MOSFET P-CH 20V 2.4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLMS6702TRPBF, features a 20V drain-source voltage and a continuous drain current capability of 2.4A at 25°C (Ta). This device is optimized for low on-resistance, with a maximum of 200mOhm specified at 1.6A and 4.5V Vgs. The MOSFET is packaged in Infineon's Micro6™ (TSOP-6) surface mount configuration, supplied on tape and reel. Key parameters include a typical 8.8 nC gate charge at 4.5V Vgs and an input capacitance of 210 pF at 15V Vds. It operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power management applications across various industries, including automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 15 V |
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