IRLMS6702TR
MOSFET P-CH 20V 2.4A 6-TSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLMS6702TR is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.4A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 200mOhm at 1.6A and 4.5V Vgs, contributing to reduced conduction losses. Key parameters include a Gate Charge (Qg) of 8.8 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 210 pF maximum at 15V Vds. The device is housed in the compact SOT-23-6 (Micro6™) surface mount package, supplied in cut tape (CT). This MOSFET is suitable for use in automotive and industrial electronic systems requiring robust and compact power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro6™(SOT23-6) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 15 V |
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