IRLMS5703TRPBF
MOSFET P-CH 30V 2.4A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLMS5703TRPBF, is a 30V device designed for efficient power switching. This component features a continuous drain current capability of 2.4A at 25°C, with a maximum power dissipation of 1.7W. The IRLMS5703TRPBF offers a low on-resistance of 180mOhm at 1.6A and 10V Vgs. It is packaged in a Micro6™(TSOP-6) surface-mount SOT-23-6 package, supplied on tape and reel for automated assembly. Key electrical specifications include a gate charge of 11 nC maximum at 10V and an input capacitance of 170 pF maximum at 25V. This MOSFET is suitable for applications in automotive and industrial sectors requiring robust and compact power control solutions. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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