IRLMS5703TR
MOSFET P-CH 30V 2.3A 6-TSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLMS5703TR is a P-channel MOSFET designed for surface-mount applications. This device features a drain-source breakdown voltage of 30 V and a continuous drain current capability of 2.3 A at 25°C ambient temperature. The IRLMS5703TR exhibits a maximum on-resistance of 200 mOhm at 1.6 A drain current and 10 V gate-source voltage. Key parameters include a gate charge of 11 nC (max) at 10 V and an input capacitance of 170 pF (max) at 25 V. Packaged in the SOT-23-6 (Micro6™) footprint and supplied in cut tape, this MOSFET is suitable for various power management and switching applications across industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro6™(SOT23-6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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