IRLMS2002TR
MOSFET N-CH 20V 6.5A 6-TSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRLMS2002TR is an N-Channel MOSFET designed for power management applications. This component features a 20V drain-to-source voltage (Vds) and a continuous drain current (Id) of 6.5A at 25°C. The device exhibits a low on-resistance (Rds On) of 30mOhm at 6.5A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 22 nC at 5V and input capacitance (Ciss) up to 1310 pF at 15V. The threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA. This MOSFET is housed in a Micro6™ (SOT-23-6) package suitable for surface mounting and is supplied in cut tape. Its specifications make it suitable for use in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro6™(SOT23-6) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 15 V |
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