IRLMS2002GTRPBF
MOSFET N-CH 20V 6.5A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLMS2002GTRPBF is an N-channel power MOSFET designed for efficient power switching applications. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 6.5A at 25°C ambient. The device exhibits a low on-resistance (Rds(on)) of 30mOhm at 6.5A and 4.5V Vgs, with a threshold voltage (Vgs(th)) of 1.2V at 250µA. Key parameters include a maximum gate charge (Qg) of 22 nC at 5V and input capacitance (Ciss) of 1310 pF at 15V. Delivered in a Micro6™ (SOT-23-6) package on tape and reel, this MOSFET supports mounting via surface mount technology. Its operating temperature range is -55°C to 150°C (TJ). The IRLMS2002GTRPBF is suitable for use in automotive, industrial, and consumer electronics sectors requiring compact and high-performance switching solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro6™(SOT23-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 15 V |
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