IRLMS2002
MOSFET N-CH 20V 6.5A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLMS2002 is a 20V N-Channel Power MOSFET designed for surface mount applications. This component, packaged in a Micro6™ (SOT23-6), offers a continuous drain current of 6.5A at 25°C with a maximum power dissipation of 2W. Key electrical characteristics include a low on-resistance of 30mOhm at 6.5A and 4.5V, a gate charge of 22nC at 5V, and input capacitance of 1310pF at 15V. The device supports gate-source voltages up to ±12V and features a threshold voltage of 1.2V at 250µA. This MOSFET is suitable for various industrial applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro6™(SOT23-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 15 V |
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