IRLMS1902TR
MOSFET N-CH 20V 3.2A MICRO6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLMS1902TR is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 3.2A at 25°C ambient. The low on-resistance of 100mOhm maximum at 2.2A and 4.5V gate drive makes it suitable for efficient power switching. With a gate charge of 7 nC maximum at 4.5V, it facilitates fast switching speeds. The device is housed in a compact Micro6™(TSOP-6) surface-mount package, often utilized in automotive, industrial, and consumer electronics for power management and control functions. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 15 V |
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