IRLMS1503TR
MOSFET N-CH 30V 3.2A 6-TSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRLMS1503TR is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 3.2 A at 25°C (Ta). The MOSFET utilizes Metal Oxide technology with a low Rds(On) of 100 mOhm at 2.2 A and 10 V, ensuring minimal power loss. Key parameters include a Gate Charge (Qg) of 9.6 nC maximum at 10 V and an Input Capacitance (Ciss) of 210 pF maximum at 25 V. The device is supplied in a Surface Mount Micro6™(TSOP-6) package, also known as SOT-23-6, and is available on Cut Tape (CT). This MOSFET is suitable for use in automotive and industrial electronics where reliable power management is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro6™(TSOP-6) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |
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