IRLML6402TRPBF-1
MOSFET P-CH 20V 3.7A SOT23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLML6402TRPBF-1, offers a 20V drain-source voltage and 3.7A continuous drain current capability at 25°C ambient. This surface mount device, packaged in a Micro3™/SOT-23, features a maximum on-resistance of 65mOhm at 3.7A and 4.5V gate-source voltage. With a gate charge of 12nC (max) at 5V and input capacitance of 633pF (max) at 10V, it is suitable for applications requiring efficient switching. The operating temperature range is -55°C to 150°C. This component finds utility in various industrial and consumer electronics applications, including power management and battery-powered devices.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 10 V |
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