IRLML6402TR
MOSFET P-CH 20V 3.7A SOT-23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel MOSFET, part number IRLML6402TR, is a surface mount device in a Micro3™/SOT-23 package. This component offers a 20V drain-source voltage and a continuous drain current of 3.7A at 25°C. Key electrical characteristics include a maximum Rds(on) of 65mOhm at 3.7A and 4.5V, with a gate charge (Qg) of 12nC at 5V. Input capacitance (Ciss) is specified at a maximum of 633pF at 10V. The threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA. This MOSFET is utilized in applications across automotive, industrial, and consumer electronics sectors. The product is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.7A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 10 V |