IRLML6402GTRPBF
MOSFET P-CH 20V 3.7A SOT23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLML6402GTRPBF, is a surface-mount device designed for power management applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.7A at 25°C. The Rds(On) is specified at a maximum of 65mOhm at 3.7A and 4.5V gate-source voltage (Vgs). It offers a gate charge (Qg) of 12 nC maximum at 5V Vgs and an input capacitance (Ciss) of 633 pF maximum at 10V Vds. The device is packaged in a SOT-23-3 (TO-236-3, SC-59) case, supplied on tape and reel. It operates within an ambient temperature range of -55°C to 150°C. This MOSFET is suitable for use in consumer electronics and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
