IRLML6401TRPBF-1
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRLML6401TRPBF-1, offers a 12V drain-to-source voltage and 4.3A continuous drain current at 25°C. This surface mount device, packaged in a PG-SOT23-3-901 (TO-236-3, SC-59, SOT-23-3), features a maximum on-resistance of 50mOhm at 4.3A and 4.5V Vgs. With a gate charge of 15nC at 5V and input capacitance of 830pF at 10V, it is suitable for applications requiring efficient switching. The operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics for power management and switching functions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | PG-SOT23-3-901 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
