IRLML6401TR
MOSFET P-CH 12V 4.3A SOT-23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRLML6401TR is a P-channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 4.3A at 25°C ambient. With a low on-resistance (Rds On) of 50mOhm at 4.3A and 4.5V Vgs, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 15 nC maximum at 5V Vgs and input capacitance (Ciss) of 830 pF maximum at 10V Vds. The MOSFET is housed in a compact Micro3™/SOT-23 surface-mount package, suitable for space-constrained designs in industries such as consumer electronics and industrial automation. The threshold voltage (Vgs(th)) is 950mV maximum at 250µA. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
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