IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRLML6302TRPBF, offers a 20V drain-source voltage and 780mA continuous drain current at 25°C. This surface mount device, packaged in a Micro3™/SOT-23, features a maximum on-resistance of 600mOhm at 610mA drain current and 4.5V gate-source voltage. With a gate charge of 3.6 nC and input capacitance of 97 pF, it is designed for efficient switching. The operating temperature range is -55°C to 150°C. This component is commonly utilized in portable electronics and power management applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 780mA (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 610mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.45 V |
| Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 15 V |