IRLML2803TRPBF-1
MOSFET N-CH 30V 1.2A SOT23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLML2803TRPBF-1 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 1.2A at 25°C ambient. The device exhibits a low on-resistance of 250mOhm maximum at 910mA and 10V Vgs, contributing to reduced conduction losses. With a gate charge of 5nC maximum and input capacitance of 85pF maximum, it is suitable for high-frequency operation. The power dissipation is rated at 540mW ambient. Packaged in a SOT-23 (TO-236-3, SC-59) surface-mount format and supplied on tape and reel, the IRLML2803TRPBF-1 is utilized across various industries, including consumer electronics and industrial automation. Maximum gate-source voltage is ±20V, and the threshold voltage is 1V maximum at 250µA.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 910mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 25 V |
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