IRLML2502GTRPBF
MOSFET N-CH 20V 4.2A SOT23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLML2502GTRPBF is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 4.2 A at 25°C, with a maximum power dissipation of 1.25 W. The Rds On is specified at a maximum of 45 mOhm at 4.2 A and 4.5 V gate drive. Key parameters include a gate charge (Qg) of 12 nC (max) at 5 V and input capacitance (Ciss) of 740 pF (max) at 15 V. It supports drive voltages from 2.5 V to 4.5 V and has a gate-source voltage tolerance of ±12 V. The threshold voltage (Vgs(th)) is a maximum of 1.2 V at 250 µA. This device is packaged in a Micro3™/SOT-23 surface mount configuration, supplied on tape and reel. It is suitable for use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Micro3™/SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 15 V |
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