IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRLML2402TRPBF is an N-Channel Power MOSFET designed for surface-mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 1.2A at 25°C. The device offers a maximum on-resistance (Rds On) of 250mOhm at 930mA and 4.5V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 3.9 nC maximum at 4.5V and input capacitance (Ciss) of 110 pF maximum at 15V. The MOSFET operates across a wide temperature range from -55°C to 150°C. Packaged in a Micro3™/SOT-23 (TO-236-3, SC-59) format, this component is suitable for various industrial and consumer electronics applications where space and efficiency are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 930mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Supplier Device Package | Micro3™/SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 15 V |
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